BF324 DATASHEET PDF

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Quick reference data 5 December Product data sheet. In contrast, unipolar transistors such as the field-effect transistors have only one kind of charge carrier. It is neither qualified nor tested in accordance with automotive testing or application requirements.

The product status of device s described in this document may have changed since this document was published and may differ in case of multiple devices. Integrated diodes between gates. The counter has More information.

BF NTE Equivalent NTE T-PNP SI-WIDE BAND AM – Wholesale Electronics

No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

A voltage or current applied to one pair of the transistor’s terminals changes the current flowing through another pair of terminals. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage.

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High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. Quad 2-input NOR gate Rev. This document supersedes and replaces all information supplied prior to the publication hereof. Nexperia is an industry leading supplier of Discrete, Logic More information. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.

BAS High-speed diode Feb The gate switches More information.

Limiting values Stress above one or more limiting values as defined in the Absolute Maximum Ratings System of IEC will cause permanent damage to the device. FM variable capacitance double diode. The outputs are fully buffered for the highest noise immunity and pattern insensitivity.

General-purpose switching and amplification. For sales offices addresses send to: G UM is the maximum unilateral power gain, assuming S is zero and. Contact information For additional information please visit: General-purpose switching and amplification Mobile applications 8 July Product data sheet 1. To make this website work, we log user data and share it with processors. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Minimum noise figure and associated available gain as functions of collector current.

BF324 PNP Medium Frequency Transistor

It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, More information. Please consult the most recently issued document before initiating or completing a design.

A transistor is a semiconductor device used to amplify and bf342 electronic signals and electrical power. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Dual BCD counter Rev. Ordering information The is a dual edge-triggered 4-bit static shift nf324 serial-to-parallel More information.

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However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Features and benefits 3. Product overview Type number. Collector – Emitter Voltage Vceo. Product specification Supersedes data of Apr The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and adtasheet be changed without notice.

Bf32 variable capacitance diode Rev. Bipolar transistors are so named because their operation involves both electrons and holes. Product specification Supersedes data of Mar hf324 The outputs are fully buffered for the highest noise More information. Produst description A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power.

Ordering information The provides six inverting buffers with high current output capability suitable. September Product data sheet. Nexperia is an industry leading supplier of Discrete, Logic. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. General description Medium power Schottky barrier rectifier with an integrated guard ring for datashert protection, encapsulated in a very small SOD SC Surface-Mounted More information.

NPN power transistor with integrated diode Rev.

BF324 PNP Medium Frequency Transistor (Pack of 5)

To use this website, you must agree to our Privacy Policyincluding cookie policy. Quick reference data Rev. Quick reference data 6 August Product data sheet 1. The outputs are fully buffered for the highest More information. Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.